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? semiconductor components industries, llc, 2012 november, 2016 ? rev. 4 1 publication order number: dtc123e/d mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 digital transistors (brt) r1 = 2.2 k , r2 = 2.2 k npn transistors with monolithic bias resistor network this series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. features ? simplifies circuit design ? reduces board space ? reduces component count ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector?base voltage v cbo 50 vdc collector?emitter voltage v ceo 50 vdc collector current ? continuous i c 100 madc input forward voltage v in(fwd) 12 vdc input reverse voltage v in(rev) 10 vdc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 see detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet . ordering information pin connections sc?75 case 463 style 1 marking diagrams xxx = specific device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending up- on manufacturing location. sc?59 case 318d style 1 sot?23 case 318 style 6 sc?70/sot?323 case 419 style 3 sot?723 case 631aa style 1 sot?1123 case 524aa style 1 xx m 1 1 xxx m xx m 1 xx m 1 x m xx m 1 1 www. onsemi.com
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 2 table 1. ordering information device part marking package shipping ? mun2231t1g 8h sc?59 (pb?free) 3000 / tape & reel mmun2231lt1g, NSVMMUN2231LT1G* a8h sot?23 (pb?free) 3000 / tape & reel mun5231t1g 8h sc?70/sot?323 (pb?free) 3000 / tape & reel dtc123eet1g 8h sc?75 (pb?free) 3000 / tape & reel dtc123em3t5g, nsvdtc123em3t5g* 8h sot?723 (pb?free) 8000 / tape & reel nsbc123ef3t5g e (180 )** sot?1123 (pb?free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nsv prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ** (xx ) = degree rotation in the clockwise direction. figure 1. derating curve ambient temperature ( c) 125 100 75 50 25 0 ?25 ?50 0 50 100 150 200 250 300 p d , power dissipation (mw) 150 (1) (2) (3) (4) (5) (1) sc?75 and sc?70/sot323; minimum pad (2) sc?59; minimum pad (3) sot?23; minimum pad (4) sot?1123; 100 mm 2 , 1 oz. copper trace (5) sot?723; minimum pad
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 3 table 2. thermal characteristics characteristic symbol max unit thermal characteristics (sc?59) (mun2231) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 230 338 1.8 2.7 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 540 370 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 264 287 c/w junction and storage temperature range t j , t stg ?55 to +150 c thermal characteristics (sot?23) (mmun2231l) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 246 400 2.0 3.2 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 508 311 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 174 208 c/w junction and storage temperature range t j , t stg ?55 to +150 c thermal characteristics (sc?70/sot?323) (mun5231) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 202 310 1.6 2.5 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 618 403 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 280 332 c/w junction and storage temperature range t j , t stg ?55 to +150 c thermal characteristics (sc?75) (dtc123ee) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 200 300 1.6 2.4 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 600 400 c/w junction and storage temperature range t j , t stg ?55 to +150 c thermal characteristics (sot?723) (dtc123em3) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 260 600 2.0 4.8 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 480 205 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad. 2. fr?4 @ 1.0 x 1.0 inch pad. 3. fr?4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr?4 @ 500 mm 2 , 1 oz. copper traces, still air.
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 4 table 2. thermal characteristics characteristic unit max symbol thermal characteristics (sot?1123) (nsbc123ef3) total device dissipation t a = 25 c (note 3) (note 4) derate above 25 c (note 3) (note 4) p d 254 297 2.0 2.4 mw mw/ c thermal resistance, (note 3) junction to ambient (note 4) r ja 493 421 c/w thermal resistance, junction to lead (note 3) r jl 193 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad. 2. fr?4 @ 1.0 x 1.0 inch pad. 3. fr?4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr?4 @ 500 mm 2 , 1 oz. copper traces, still air. table 3. electrical characteristics (t a = 25 c, unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector?emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter?base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 2.3 madc collector?base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector?emitter breakdown voltage (note 5) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics dc current gain (note 5) (i c = 5.0 ma, v ce = 10 v) h fe 8.0 15 ? collector?emitter saturation voltage (note 5) (i c = 10 ma, i b = 5.0 ma) v ce(sat) ? ? 0.25 vdc input voltage (off) (v ce = 5.0 v, i c = 100 a) v i(off) ? 1.2 0.5 vdc input voltage (on) (v ce = 0.3 v, i c = 20 ma) v i(on) 2.0 1.7 ? vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 1.5 2.2 2.9 k resistor ratio r 1 /r 2 0.8 1.0 1.2 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulsed condition: pulse width = 300 msec, duty cycle 2%.
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 5 typical characteristics mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3 figure 2. v ce(sat) vs. i c figure 3. dc current gain i c , collector current (ma) i c , collector current (ma) 40 30 20 50 10 0 0.01 0.1 1 100 10 1 0.1 0.1 10 100 1000 figure 4. output capacitance figure 5. output current vs. input voltage v r , reverse voltage (v) v in , input voltage (v) 50 40 30 20 10 0 0 1 2 3 4 4 3 2 1 0 0.1 1 10 100 figure 6. input voltage vs. output current i c , collector current (ma) 40 30 50 20 10 0 0.1 1 10 100 v ce(sat) , collector?emitter voltage (v) h fe , dc current gain c ob , output capacitance (pf) i c , collector current (ma) v in , input voltage (v) i c /i b = 10 150 c ?55 c 25 c v ce = 10 v 150 c ?55 c 25 c f = 10 khz i e = 0 a t a = 25 c v o = 5 v 150 c ?55 c 25 c v o = 0.2 v 150 c ?55 c 25 c 1
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 6 package dimensions sc?59 case 318d?04 issue h style 1: pin 1. base 2. emitter 3. collector e a1 b a e d 2 3 1 c l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2.4 0.094 0.95 0.037 0.95 0.037 1.0 0.039 0.8 0.031 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 1.00 1.15 1.30 0.039 inches a1 0.01 0.06 0.10 0.001 b 0.35 0.43 0.50 0.014 c 0.09 0.14 0.18 0.003 d 2.70 2.90 3.10 0.106 e 1.30 1.50 1.70 0.051 e 1.70 1.90 2.10 0.067 l 0.20 0.40 0.60 0.008 2.50 2.80 3.00 0.099 0.045 0.051 0.002 0.004 0.017 0.020 0.005 0.007 0.114 0.122 0.059 0.067 0.075 0.083 0.016 0.024 0.110 0.118 nom max h e
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 8 package dimensions sc?70 (sot?323) case 419?04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 9 package dimensions sc?75/sot?416 case 463 issue g style 1: pin 1. base 2. emitter 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.061 0.063 0.065 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.060 0.063 0.067 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 10 package dimensions sot?723 case 631aa issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36
mun2231, mmun2231l, mun5231, dtc123ee, dtc123em3, nsbc123ef3 www. onsemi.com 11 package dimensions sot?1123 case 524aa issue c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. dim min max millimeters a 0.34 0.40 b 0.15 0.28 c 0.07 0.17 d 0.75 0.85 e 0.55 0.65 0.95 1.05 l 0.185 ref h e d e c a ?y? ?x? h e *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e b1 0.10 0.20 style 1: pin 1. base 2. emitter 3. collector 1 2 3 0.35 0.40 top view side view 3x bottom view l2 l 3x dimensions: millimeters 1.20 2x 0.26 3x 0.34 package outline b 2x b1 e 0.08 xy l2 0.05 0.15 0.20 0.38 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 dtc123e/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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